View K4004-01MR_7670374.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

date name drawn checked approved d w g . n o . specification device name : type name : spec. no. : date : h04-004-05 2sK4004-01MR ms5f5983 ms5f5983 1 / 18 power mosfet jan.-31-2005 fuji electric device technology co.,ltd. t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . jan.-31-'05 jan.-31-'05 jan.-31-'05 a free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 2 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a revised records date classification index content drawn checked checked approved enactment jan.-31 2005 a july.-3 2006 revision revised rds(on)-tch graph. free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 3 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 1.scope this specifies fuji power mosfet 2sK4004-01MR 2.construction n-channel enhancement mode power mosfet 3.applications for switching 4.outview to-220f outview see to 8/18 page 5.absolute maximum ratings at tc=25 ? c (unless otherwise specified) description symbol characteristics unit remarks v ds 500 v v dsx 500 v vgs=-30v continuous drain current i d a pulsed drain current i dp 36.0 a gate-source voltage v gs 30 v i ar 9.0 a e as mj e ar mj maximum drain-source dv/dt dv ds /dt kv/ s peak diode recovery dv/dt dv/dt kv/ s t c = 2 5 c 2.16 t a = 2 5 c operating and storage t ch 150 ? c temperature range t stg -55 to +150 ? c isolation voltage v iso kvrms 6.electrical characteristics at tc=25 ? c (unless otherwise specified) static ratings description symbol conditions min. typ. max. unit drain-source i d = 2 5 0 a breakdown voltage bv dss v gs =0v 500 - - v gate threshold i d = 2 5 0 a voltage v gs (th) v ds =v gs 2.5 - 3.5 v zero gate voltage v ds =500v v gs =0v t ch = 2 5 c - - 25 drain current i dss v ds =400v v gs =0v t ch = 1 2 5 c - - 250 gate-source v gs = 3 0 v leakage current i gss v ds =0v - - 100 na drain-source i d =4.5a on-state resistance r ds (on) v gs =10v - 0.65 0.85 9.0 5 drain-source voltage note *2 note *3 p d 48 repetitive and non-repetitive maximum avalanche current 349 repetitive maximum avalanche energy 4.8 a note *1 non-repetitive maximum avalanche energy note *4 20 vds ?? 500v 2 t=60sec f=60hz w maximum power dissipation free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 4 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a dynamic ratings description symbol conditions min. typ. max. unit forward i d =4.5a transconductance g fs v ds =25v 6.0 12.0 - s input capacitance ciss v ds =25v - 800 1200 output capacitance coss v gs =0v - 100 150 reverse transfer f=1mhz 6.0 9 pf capacitance crss - td(on) v cc =300v - 12 18 turn-on time tr v gs =10v - 5.6 8.4 td(off) i d =4.5a - 40 60 ns turn-off time tf r gs = 1 0 - 8.0 12 total gate charge q g v cc =250v - 24 36 gate-source charge q gs i d =9.0a - 7.0 10.5 nc gate-drain charge q gd v gs =10v - 6.0 9.0 reverse diode description symbol conditions min. typ. max. unit diode forward i f =9.0a on-voltage v sd v gs =0v t c h = 2 5 c - 0.95 1.43 v reverse recovery i f =9.0a time trr v gs =0v - 0.5 - s reverse recovery - d i / d t = 1 0 0 a / s charge qrr t ch = 2 5 c - 4.5 - c 7.thermal resistance description symbol min. typ. max. unit channel to case rth(ch-c) 2.604 ? c/w channel to ambient rth(ch-a) 58 ? c/w note *1 : tch ?? 1 5 0 c , s e e f i g . 1 a n d f i g . 2 note *2 : starting tch=25 ?? ,i as =4.0a,l=40.0mh,vcc=50v,r g = 5 0 , s e e f i g . 1 a n d f i g . 2 e as limited by maximum channel temperature and avalanche current. see to the 'maximum avalanche energy' graph of page 17/18. note *3 : repetitive rating : pulse width limited by maximum channel temperature. see to the 'maximum transient thermal impedance' graph of page 18/18. note *4 : i f ?? -i d , - d i / d t = 5 0 a / s , v c c ?? bv dss ,tch ?? 1 5 0 c free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 5 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a fig.1 test circuit fig.2 operating waveforms 50 ?? d.u.t l vcc -15v 0 bv dss idp v gs i d v ds +10v vcc=50v single pulse test free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 6 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 8.reliability test items all guaranteed values are under the categories of reliability per non-assembled(only mosfets). each categories under the guaranteed reliability conform to eiaj ed4701 / 10 0 method104 standards. test items required without fail h u m i d i f i c a t i o n t r e a t m e n t ( 8 5 2 c , 6 5 5 % r h , 1 6 8 2 4 h r ) heat treatment of soldering ( solder dipping , 260 5 c(265 cmax.),10 1sec,2 times) test test testing methods and conditions reference sampling acceptance no. items standard number number 1 terminal pull force strength to-220,to-220f : 10n eiaj (tensile) to-3p,to-3pf,to-247 : 25n ed4701/400 15 to-3pl : 45n method 401 t-pack,k-pack : 10n f o r c e m a i n t a i n i n g d u r a t i o n : 3 0 5 s e c 2 terminal load force strength to-220,to-220f : 5n eiaj (bending) to-3p,to-3pf,to-247 : 10n ed4701/400 15 to-3pl : 15n method 401 t-pack,k-pack : 5n number of times :2times(90deg./time) 3 mounting screwing torque value: (m3) eiaj (0:1) strength t o - 2 2 0 , t o - 2 2 0 f : 4 0 1 0 n ?e cm ed4701/400 15 t o - 3 p , t o - 3 p f , t o - 2 4 7 : 5 0 1 0 n ?e cm method 402 t o - 3 p l : 7 0 1 0 n ?e cm 4 vibration frequency : 100hz to 2khz eiaj acceleration : 200m/s 2 ed4701/400 15 sweeping time : 4min. method 403 48min. for each x,y&z directions. 5 shock peak amplitude: 15km/s 2 eiaj duration time : 0.5ms ed4701/400 15 3times for each x,y&z directions. method 404 6 solderability solder temp. : 245 ? 5 ? c immersion time : 5 ? 0.5sec each terminal shall be immersed in ----- 15 the solder bath within 1 to 1.5mm from the body. 7 resistance to solder temp. : 260 ? 5 ? c eiaj soldering heat immersion time : 10 ? 1sec ed4701/300 15 number of times : 1times method 302 m e c h a n i c a l t e s t m e t h o d s m e c h a n i c a l t e s t m e t h o d s free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 7 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a failure criteria symbols unit lower limit upper limit breakdown voltage bvdss lsl ----- v zero gate voltage drain-source current idss ----- usl a gate-source leakage current igss ----- usl a gate threshold voltage vgs(th) lsl usl v drain-source on-state resistance rds(on) ----- usl ? forward transconductance gfs lsl ----- s diode forward on-voltage vsd ----- usl v marking soldering ----- with eyes or microscope ----- and other damages * lsl : lower specification limit * usl : upper specification limit * before any of electrical characteristics measure, all testing related to the humidity h a v e c o n d u c t e d a f t e r d r y i n g t h e p a c k a g e s u r f a c e f o r m o r e t h a n a n h o u r a t 1 5 0 c . item failure criteria e l e c t r i c a l c h a r a c t e r i s t i c s o u t v i e w test test testing methods and conditions reference sampling acceptance no. items standard number number 1 high temp. t e m p e r a t u r e : 1 5 0 + 0 / - 5 c eiaj 22 storage test duration : 1000hr ed4701/200 method 201 2 low temp. t e m p e r a t u r e : - 5 5 + 5 / - 0 c eiaj 22 storage test duration : 1000hr ed4701/200 method 202 3 temperature t e m p e r a t u r e : 8 5 2 c eiaj humidity r e l a t i v e h u m i d i t y : 8 5 5 % ed4701/100 22 storage test duration : 1000hr method 103 4 temperature t e m p e r a t u r e : 8 5 2 c eiaj humidity r e l a t i v e h u m i d i t y : 8 5 5 % ed4701/100 22 bias bias voltage : v ds (max) * 0.8 method 103 test duration : 1000hr 5 unsaturated t e m p e r a t u r e : 1 3 0 2 c eiaj (0:1) pressurized r e l a t i v e h u m i d i t y : 8 5 5 % ed4701/100 22 vapor vapor pressure : 230kpa method 103 test duration : 48hr 6 temperature h i g h t e m p . s i d e : 1 5 0 5 c / 3 0 m i n . eiaj cycle l o w t e m p . s i d e : - 5 5 5 c / 3 0 m i n . ed4701/100 22 r t : 5 c ?` 3 5 c / 5 m i n . method 105 number of cycles : 100cycles 7 thermal shock fluid : pure water(running water) h i g h t e m p . s i d e : 1 0 0 + 0 / - 5 c eiaj 22 l o w t e m p . s i d e : 0 + 5 / - 0 c ed4701/300 duration time : ht 5min,lt 5min method 307 number of cycles : 100cycles 8 intermittent t c = 9 0 d e g r e e eiaj operating tch ?? tch(max.) ed4701/100 22 life test duration : 3000 cycle method 106 9 htrb t e m p e r a t u r e : t c h = 1 5 0 + 0 / - 5 c eiaj (gate-source) bias voltage : +v gs (max) ed4701/100 22 (0:1) test duration : 1000hr method 101 10 htrb t e m p e r a t u r e : t c h = 1 5 0 + 0 / - 5 c eiaj (drain-source) bias voltage : v ds (max) ed4701/100 22 test duration : 1000hr method 101 c l i m a t i c t e s t m e t h o d s e n d u r a n c e t e s t m e t h o d s free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 8 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 9 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 9. cautions although fuji electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take ade quate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. it is recommended to make your design fail - safe, flame retardant, and free of malfunction. the products described in th is specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. computers oa equipment communications equipment(terminal devices) machine tools av equipment measurement eq uipment personal equipment industrial robots electrical home appliances etc. the products described in this specification are not designed or manufactured to be used in equipment or systems used under life - threatening situations. if you are consi dering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. backbone network equipment transportation equipment (automobiles, trains, ships, etc.) traffic - signal control equipment gas alarms, leakage gas auto breakers submarine repeater equipment burglar alarms, fire alarms, emergency equipment medical equipment nuclear con trol equipment etc. do not use the products in this specification for equipment requiring strict reliability such as(but not limited to): aerospace equipment aeronautical equipment 10. warnings the mosfets should be used in products within th eir absolute maximum rating(voltage, current, temperature, etc.). the mosfets may be destroyed if used beyond the rating. we only guarantee the non - repetitive and repetitive avalanche capability and not for the continuous avalanche capability which can be assumed as abnormal condition .please note the device may be destructed from the avalanche over the specified maximum rating. the equipment containing mosfets should have adequate fuses or circuit breakers to prevent the equipment from causing second ary destruction (ex. fire, e xplosion etc ). use the mosfets within their reliability and lifetime under certain environments or conditions. the mosfets may fail before the target lifetime of your products if used under certain reliability conditions. be careful when handling mosfets for esd damage. (it is an important consideration. ) w h e n h a n d l i n g m o s f e t s , h o l d t h e m b y t h e c a s e ( p a c k a g e ) a n d d o n t t o u c h t h e l e a d s a n d t e r m i n a l s . it is recommended that any handling of mosfets is done on grounded elec trically conductive floor and tablemats. free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 10 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a before touching a mosfet terminal , d ischarge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1m ? ) when soldering, in order to protect the mosfets from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. you must design the mosfets to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destru ction of devices. consider the possible temperature rise not only for the channel and case, but also for the outer leads. do not directly touch the leads or package of the mosfets while power is supplied or during operation in order to avoid electric s hock and burns. the mosfets are made of incombustible material. however, if a mosfet fails, it may emit smoke or flame. also, operating the mosfets near any flammable place or material may cause the mosfets to emit smoke or flame in case the mosfets beco me even hotter during operation. design the arrangement to prevent the spread of fire. the mosfets should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) the mosfets should not used in an irradiated environment since they are not radiation - proof. installation soldering involves temperatures which exceed the device storage temperature rating. to avoid device damage and to ensure reliability, observe the following guidelin es from the quality assurance standard. solder temperature and duration (through - hole package) solder temperature duration 260 ? 5 ? c 10 ? 1 seconds 350 ? 10 ? c 3.5 ? 0.5 seconds the immersion depth of the lead should basically be up to the lead stopper an d the distance should be a maximum of 1.5mm from the device. when flow - soldering, be careful to avoid immersing the package in the solder bath. refer to the following torque reference w hen mounting the device on a heat sink. excess torque applied to th e mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. table 1: recommended tightening torques. package style screw t ightening torques note to - 220 to - 220f m3 30 C 50 ncm to - 3p to - 3pf to - 247 m3 40 C 60 ncm to - 3pl m3 60 C 80 ncm flatness : < = 3 0 ? m roughness : <= 10 ? m plane off the edges : c< = 1.0mm free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 11 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a t h e h e a t s i n k s h o u l d h a v e a f l a t n e s s w i t h i n 3 0 m a n d r o u g h n e s s w i t h i n 1 0 m . a l s o , k e e p t h e t i g h t e n i n g torque within the limits of this specification. improper handling may cause isolation breakdown leading to a critical accident. ex.) over plane off the edges of screw hole. ( r ecommended plane off the edge is c<1.0mm) we recommend the use of thermal comp ound to optimize the efficiency of heat radiation. it is important to evenly apply the compound and to eliminate any air voids. storage the mosfets must be stored at a standard temperature of 5 to 35 c and relative humidity of 45 to 75%. if the st orage area is very dry, a humidifier may be required. in such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. the mosfets should not be subjected to rapid changes in temperature to avoid condensati on on the surface of the mosfets. therefore store the mosfets in a place where the temperature is steady. the mosfets should not be stored on top of each other, since this may cause excessive external force on the case. the mosfets should be stored wit h the lead terminals remaining unprocessed. rust may cause presoldered connections to fail during later processing. the mosfets should be stored in antistatic containers or shipping bags. 11 .appendix this products does not contain pbbs (polybrominate d biphenyl) or pbdes (polybrominated diphenyl ether ) , substances . this products does not contain class - i ods and class - ii ods substances set force by c l e a n a i r a c t o f u s law . if you have any questions about any part of this specification, please contact fuji electric or its sales agent before using the product. neither fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. the application examples described in this specifi cation are merely typical uses of fuji electric products. this specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 12 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 0 25 50 75 100 125 150 0 10 20 30 40 50 60 allowable power dissipation pd=f(tc) p d [ w ] tc [ ? c] 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 20v 10v 6.0v 5.5v 5.0v 4.5v i d [ a ] vds [v] typical output characteristics id=f(vds):80 ? s pulse test,tch=25 ? c vgs=4.0v free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 13 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 0.1 1 10 0.1 1 10 100 g f s [ s ] id [a] typical transconductance gfs=f(id):80 ? s pulse test,vds=25v,tch=25 ? c 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10 100 i d [ a ] vgs[v] typical transfer characteristic id=f(vgs):80 ? s pulse test,vds=25v,tch=25 ? c free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 14 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 6.0v r d s ( o n ) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 ? s pulse test,tch=25 ? c 10v 20v 5.5v 5.0v 4.5v vgs= 4.0v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 r d s ( o n ) [ ? ] tch [ ? c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=4.5a,vgs=10v free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 15 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua v g s ( t h ) [ v ] tch [ ? c] 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 18 20 qg [nc] typical gate charge characteristics vgs=f(qg):id=9a,tch=25 ? c v g s [ v ] 400v 250v vcc= 100v free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 16 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [ f ] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 i f [ a ] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 ? s pulse test,tch=25 ? c free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 17 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ n s ] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 i as =4a i as =9a i as =6a e a s [ m j ] starting tch [ ? c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=50v free datasheet http://www..net/
d w g . n o . h04-004-03 fuji electric device technology co.,ltd. ms5f5983 18 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . a 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 ? c,vcc=50v a v a l a n c h e c u r r e n t i a v [ a ] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 z t h ( c h - c ) [ ?? / w ] t [sec] free datasheet http://www..net/

▲Up To Search▲

Price & Availability of K4004-01MR

	To Download K4004-01MR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .